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Title:
SINTERED ALUMINUM NITRIDE, AND BOARD USING THE SAME FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001097780
Kind Code:
A
Abstract:

To provide a sintered aluminum nitride of controlled metallization failure rate, and also to provide a board using the same for semiconductor devices.

This sintered aluminum nitride exhibits an orange color, when irradiated with black light of 3,650 in wavelength and ultraviolet strength of 3,730 mW/cm2, and has a liquid phase component composed of a Y-Al-O-based compound on a surface irradiated with the black light.


Inventors:
HATORI TAKAE
SANO TAKASHI
Application Number:
JP28057499A
Publication Date:
April 10, 2001
Filing Date:
September 30, 1999
Export Citation:
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Assignee:
TOSHIBA CORP
TOSHIBA ELECTRONIC ENG
International Classes:
H05K1/03; C04B35/584; H01L23/15; (IPC1-7): C04B35/584; H01L23/15; H05K1/03
Domestic Patent References:
JPH02307871A1990-12-21
JPH06107485A1994-04-19
JPH05319965A1993-12-03
JPH0653624A1994-02-25
JPH0891935A1996-04-09
JPH02180761A1990-07-13
JPH05238830A1993-09-17
JPH0354168A1991-03-08
JPH08119742A1996-05-14
JPH04285071A1992-10-09
JPH01311252A1989-12-15
JPS62167260A1987-07-23
JPS62287133A1987-12-14
JPS6066942A1985-04-17
Attorney, Agent or Firm:
Suyama Saichi