To provide a sintered compact for producing a resistance film having high reproducibility and the controllability of resistance value, and to provide a film deposition method using the same.

A sintered compact comprising ≥95 wt.% germanium and tungsten is used as a target in a PVD (Physical Vapor Deposition) system. Preferably, the sintered compact is used as a target in sputtering. The sintered compact is subjected to sputtering to deposit a resistance film on a substrate. The substrate on which the resistance film is deposited is used as a spacer of a picture display device. The weight ratio of tungsten to germanium in the sintered compact is controlled to 0.01 to 10, and the packing ratio of germanium and tungsten in the sintered compact is controlled to ≥60%.