SKUTTERUDITE THERMOELECTRIC MATERIAL AND MANUFACTURE THEREOF

Japanese Patent JPH1140860

A

To enable a thermoelectric material to be reduced in heat conductivity an enhanced in figure of merit by a method, wherein the thermoelectric material is formed of a skutterudite compound and set less than a specific value in average crystal grain diameter.

A skutterudite thermoelectric material is formed of a skutterudite compound such as an AB3 compound, a substituent compound, or an interstitial compound and contains a very small amount of additive impurities, as necessary. A CoSb3 compound and a Co1-XMXSb3 (M contains one or more elements selected from among Pd, Rh, Ru, and Pt, X=0 to 0.2) are used as the AB3 compound and the substituent compound respectively. The skutterudite thermoelectric material is 1 μm or below in average crystal grain diameter. By this setup, a skutterudite thermoelectric material can be significantly lessened in thermal conductivity and enhanced in figure of merit.

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NAKAGAWA HAMAZOU
KASAMA AKIO
TANAKA HISAO
TANIGUCHI MOTOMU

JP19585597A

February 12, 1999

July 22, 1997

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YAMAGUCHI PREF GOV SANGYO GIJU

B22F1/00; B22F3/14; C22C1/04; C22C12/00; H01L35/14; H01L35/18; H01L35/34; (IPC1-7): H01L35/14; C22C1/04; C22C12/00; H01L35/18; H01L35/34

Ishikawa Hideki

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