Title:
SLICING METHOD OF SEMICONDUCTOR SINGLE CRYSTAL INGOT
Document Type and Number:
Japanese Patent JP2014195025
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To precisely control a deflection amount of a wafer to a wanted amount as well as reduce the deflection amount of the wafer.SOLUTION: A slicing method of a semiconductor single crystal ingot 13 is improved, in which a cylindrical semiconductor single crystal ingot 13 is bonded and held by a holding jig 14 while it is rotated by a predetermined rotation angle around a crystal axis 13b of the ingot 13 which is different from a central axis 13a of the cylinder of the ingot 13, and in this condition, the ingot 13 is sliced by a cutting device 16. The configuration is featured by determining a predetermined rotational angle when the ingot 13 is bonded and held by the holding jig 14 such that a deflection amount of the wafer having been sliced by the cutting device 16 becomes a predetermined amount.
Inventors:
NOGUCHI HIROSHI
Application Number:
JP2013071236A
Publication Date:
October 09, 2014
Filing Date:
March 29, 2013
Export Citation:
Assignee:
SUMCO TECHXIV CORP
International Classes:
H01L21/304; B24B27/06
Domestic Patent References:
| JPH10182299A | 1998-07-07 | |||
| JP2012106903A | 2012-06-07 | |||
| JP2004533347A | 2004-11-04 |
Foreign References:
| WO2012165108A1 | 2012-12-06 | |||
| WO2012150517A1 | 2012-11-08 |
Attorney, Agent or Firm:
Masayoshi Suda