Title:
SLURRY FOR CHEMICAL-MECHANICAL POLISHING
Document Type and Number:
Japanese Patent JP3768401
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide slurry for chemical-mechanical polishing, that inhibits generation of dishing, and at the same time, achieves polishing at a high polishing speed in chemical-mechanical polishing in a metal film formed on an insulating film having a recess on a substrate.
SOLUTION: A thickening agent, set to at least 0.001 and less than 0.05 percentage by mass with respect to the entire slurry. In this case, the thickening agent does not have an ionic group, having a sign opposite to that of a charge on the surface of a polishing material particle. Viscosity in the slurry is adjusted to at least 1 mPa.s and less than 5 mPa.s.
Inventors:
Yasuaki Tsuchiya
Azumi Waki
Tetsuyuki Itakura
Shin Sakurai
Kenichi Aoyagi
Azumi Waki
Tetsuyuki Itakura
Shin Sakurai
Kenichi Aoyagi
Application Number:
JP2000357795A
Publication Date:
April 19, 2006
Filing Date:
November 24, 2000
Export Citation:
Assignee:
NEC Electronics Corporation
Tmp corporation
Tmp corporation
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14; C09K13/00; H01L21/306; (IPC1-7): H01L21/304; B24B37/00; C09K3/14; H01L21/306
Domestic Patent References:
| JP2000243730A | ||||
| JP2000160136A |
Attorney, Agent or Firm:
Akio Miyazaki
Shinichi Iwata
Masaaki Ogata
Ishibashi Masayuki
Shinichi Iwata
Masaaki Ogata
Ishibashi Masayuki
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