Title:
Sn-In-BASED LOW MELTING POINT BONDING MEMBER AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR ELECTRONIC CIRCUIT AND MOUNTING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2022043722
Kind Code:
A
Abstract:
To provide a Sn-In-based low melting point bonding member that is used for a Pb-free conductive bonding method in mounting a semiconductor component and can be bonded at a low temperature, and a manufacturing method thereof.SOLUTION: A manufacturing method of an Sn-In-based low melting point bonding member includes a plating step of forming a laminated plating layer containing 46 mass% or more and 51 mass% or less of Sn and 49 mass% or more and 54 mass% or less of In on an object to be plated when plating processing including at least Sn plating and In plating is performed and the total of Sn and In is 100 mass%. An Sn-In-based low melting point bonding member includes a laminated plating layer containing a SnIn layer containing Sn and In, having 46 mass% or more and 51 mass% or less of Sn, and 49 mass% or more and 54 mass% or less of In when the total of Sn and In is 100 mass%, and an Sn-In low melting point bonding member is obtained by heating thereof.SELECTED DRAWING: Figure 1
Inventors:
NISHI HIROTOSHI
SAWAI TAKESHI
SHIROKAWA KENICHIRO
OMAE SOICHIRO
SAWAI TAKESHI
SHIROKAWA KENICHIRO
OMAE SOICHIRO
Application Number:
JP2020149167A
Publication Date:
March 16, 2022
Filing Date:
September 04, 2020
Export Citation:
Assignee:
SHINRYO CORP
International Classes:
H01L21/60; B23K35/14; B23K35/26; C22C13/00; C22C28/00
Attorney, Agent or Firm:
Toru Nanse
Hisashi Kato
Kuboyama Takashi
Keita Tohsaka
Hisashi Kato
Kuboyama Takashi
Keita Tohsaka