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Patent Searching and Data


Title:
SNUBBER CIRCUIT FOR POWER SWITCHING TRANSISTOR
Document Type and Number:
Japanese Patent JPS5826568
Kind Code:
A
Abstract:
A low dissipation snubber for switching power transistors uses the energy stored in a snubber capacitor to provide all the base boost power required for switching the power transistors on. The snubber consists of a diode (14) and a snubber capacitor (15) connected in series between the collector and emitter of the switching transistors (11) with a resistor (16) connected at one end to the junction of the diode and the snubber capacitor. The other end of the resistor is connected to the base turn-on circuit (12) for the switching power transistors so as to provide a discharge path for the snubber capacitor. By using the discharge of the snubber capacitor, power which is normally dissipated as heat is reclaimed so that the drive power requirements for the switching power transistors are reduced.

Inventors:
JIEEMUZU WASHINTON BIISURII FU
Application Number:
JP12070082A
Publication Date:
February 17, 1983
Filing Date:
July 13, 1982
Export Citation:
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Assignee:
GEN ELECTRIC
International Classes:
H02M1/08; H02M1/34; H02M7/5387; H03K17/042; H03K17/0814; H03K17/16; H03K17/00; (IPC1-7): H02M1/18
Domestic Patent References:
JPS50152235A1975-12-08
JPS5745722A1982-03-15
Attorney, Agent or Firm:
Tokunji Ikunuma