Title:
SOI CRYSTAL FORMATION
Document Type and Number:
Japanese Patent JPS60189215
Kind Code:
A
Abstract:
PURPOSE:To form a single crystal silicon film of uniform plane orientation without using seed crystal by laser-annealing a polycrystalline silicon film buried in a groove, by forming a secondary seed crystal region prepared in part of the groove in priority and by grain growth. CONSTITUTION:A Cw-Ar laser is scanned in X direction with power 4W, beam diameter 100mumphi and scanning speed 2mm./S against a polycrystalline silicon film 6 buried in parallel grooves 5, part of a region where groove patterns are formed is annealed and a secondary seed crystal region is formed. Then, the Cw- Ar laser is scanned in Y direction for grain growth of the polycrystalline silicon film 6 in the parallel grooves 5. The conditions of the annealing are power 8W, beam diameter 120mumphi and scanning speed 10mm./S. If the power of an Ar laser is low, recrystallization is insufficient and the grain growth in the longitudinal direction of the parallel grooves 5 is not carried out but as above-mentioned, the grain growth is carried out maintaining crystallographical direction in the seed crystal region if annealed with optimum power.
Inventors:
EGAMI KOUJI
KIMURA MASAKAZU
KIMURA MASAKAZU
Application Number:
JP4293384A
Publication Date:
September 26, 1985
Filing Date:
March 08, 1984
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L27/00; H01L21/20; H01L21/822; (IPC1-7): H01L21/263; H01L27/00
Domestic Patent References:
| JPS5856316A | 1983-04-04 |