Title:
SOI ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3644833
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce a floating body effect in an SOI element, by a method wherein the active regions of the transistors of the SOI element are respectively coupled electrically with contact pads through first conductivity type silicon layers.
SOLUTION: The lower parts of first and second active regions are respectively coupled with P-type and N-type semiconductor layers 20b and 20c, which are respectively formed with a contact pad, through a P-type high-concentration polysilicon layer 23a and an N-type high-concentration polysilicon layer 23b. As a channel region of a transistor is coupled with the contact pad 36a through the layers 23a and 20b, holes generated in a channel of the transistor are attracted to an external terminal without being stored in the channel. A channel region of a transistor is coupled with the contact pad 36f through the layers 23b and 23c. Holes generated in a channel of the transistor are attracted to an external terminal without being stored in the channel. As a result, a floating body effect can be reduced in a SOI element.
Inventors:
John Hwang Song
Application Number:
JP35591998A
Publication Date:
May 11, 2005
Filing Date:
December 15, 1998
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
H01L27/12; H01L21/02; H01L21/336; H01L21/84; H01L29/786; (IPC1-7): H01L29/786; H01L21/336; H01L27/12
Domestic Patent References:
| JP3288471A | ||||
| JP2110974A | ||||
| JP4068569A | ||||
| JP55058543A | ||||
| JP63124470A | ||||
| JP9181192A | ||||
| JP10074921A |
Foreign References:
| GB2309825A |
Attorney, Agent or Firm:
Masaki Yamakawa
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