Title:
SOI SUBSTRATE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3085184
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an SOI substrate at low manufacturing cost, developing no crystal defects on the SOI(silicon on insulator) layer.
SOLUTION: In order to manufacture an SOI substrate formed by bonding the first semiconductor wafer 1 onto second semiconductor wafer 2, firstly, the first semiconductor wafer 1 having mirror main surface is provided with at least a layer in the main surface side interlattice oxygen concentration of at most 1×1018atoms/cm3, while the second semiconductor wafer 2 having at least mirror main surface, and after the formation of an oxide film on the main surface of at least one semiconductor wafer, both main surfaces are bonded onto each other and heat treated to be bonded. Next, the first semiconductor wafer 1 is formed into a thin film from the back side thereof to be mirror surfaced, leaving the layers only in the interlattice oxygen concentration of at most 1×1018atoms/cm3.
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Inventors:
Shinichi Tomita
Yasunobu Ikeda
Masakazu Sano
Yasunobu Ikeda
Masakazu Sano
Application Number:
JP6602796A
Publication Date:
September 04, 2000
Filing Date:
March 22, 1996
Export Citation:
Assignee:
SUMITOMO METAL INDUSTRIES,LTD.
International Classes:
H01L21/304; H01L21/02; H01L27/12; (IPC1-7): H01L27/12; H01L21/02; H01L21/304
Domestic Patent References:
| JP7263652A |
Attorney, Agent or Firm:
Masazumi Mori