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Title:
太陽電池の製造方法
Document Type and Number:
Japanese Patent JP5285651
Kind Code:
B2
Abstract:
A process for producing a solar cell is provided which can enhance the photovoltaic conversion efficiency by enlarging the grain sizes in the direction of the thickness of an i-layer to reduce grain boundaries, thereby avoiding recombination of carriers and activating the dopant at the same time. A process for producing a solar cell includes depositing at least a first transparent electrode (12), polycrystalline silicon layers in a PIN structure (13, 14, 15), and a second electrode (16) in sequence on an electrically insulating substrate (11), the polycrystalline silicon layers in a PIN structure including a p-type silicon layer (13), an i-type silicon layer (14), and an n-type silicon layer (15), wherein the polycrystalline silicon layers in a PIN structure are formed by : forming a p-type silicon layer (13), which is then subjected to thermal annealing; depositing an i-type silicon layer (14) on the p-type silicon layer; and depositing an n-type silicon layer (15) on the i-type silicon layer.

Inventors:
Masayuki Kureya
Yoji Nakano
Yoshiki Miyamoto
Application Number:
JP2010086920A
Publication Date:
September 11, 2013
Filing Date:
April 05, 2010
Export Citation:
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Assignee:
MITSUBISHI HEAVY INDUSTRIES,LTD.
International Classes:
H01L31/04; H01L31/036; H01L31/0368; H01L31/0376; H01L31/06; H01L31/075; H01L31/076; H01L31/18; H01L31/20
Domestic Patent References:
JP11186574A
JP2002170973A
JP2000022182A
JP2000138384A
JP9092855A
Attorney, Agent or Firm:
Noriharu Fujita
Kunio Ueda