Title:
SOLAR CELL
Document Type and Number:
Japanese Patent JP2675754
Kind Code:
B2
Abstract:
PURPOSE: To make it possible to improve the power generating performance by providing at least one dopant concentration peak since the concentration of dopant in the thin film of deposited semiconductor is ununiformed in the growing direction.
CONSTITUTION: A P-type deposited semiconductor thin film having a peak of boron concentration is constituted by a non-doped amorphous silicon layer 2, P-type dopant layer 3, P-type amorphous silicon layer 4, P-type dopant layer 5, P-type amorphous silicon layer 6 and P-type dopant layer 7. Also, an n+ type deposited semiconductor thin film having a peak of phosphorus concentration is constituted by an n-type dopant layer 8, n-type fine crystal silicon layer 9, n-type dopant layer 10, n-type fine crystal silicon layer 11, and n-type dopant layer 12. By doing this, a sudden increase in a defect of the deposited semiconductor thin film due to dopant introduction can be restricted, a dope layer having a low membranaceous drop can be obtained, good junction characteristics can be obtained, and also the recombination of carriers at the electrode portion can be restricted.
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Inventors:
Takeshi Watanabe
Shinichi Muramatsu
Ken Tsutsui
Takeshi Uematsu
Mitsunori Warabi
Hiroyuki Otsuka
Nagata Nei
Shinichi Muramatsu
Ken Tsutsui
Takeshi Uematsu
Mitsunori Warabi
Hiroyuki Otsuka
Nagata Nei
Application Number:
JP15699494A
Publication Date:
November 12, 1997
Filing Date:
July 08, 1994
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L31/04; (IPC1-7): H01L31/04
Domestic Patent References:
| JP6340382A | ||||
| JP158962U |
Attorney, Agent or Firm:
Junnosuke Nakamura