Title:
SOLID IMAGE PICKUP DEVICE
Document Type and Number:
Japanese Patent JP3445502
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enable the charge in a photodiode layer at low voltage to be read out even if a surface shield structure is adopted in a CMOS image sensor.
SOLUTION: For example, a surface shield layer 17 is formed separate from the end of a read out gate 14 on the surface of a photodiode layer 16. Next, an impurity region 21 in higher concentration than that of the photodiode layer 16 is formed between this surface shield layer 17 and the read out gate 14. Through these procedures, the formation of potential barrier by the surface shield layer 17 is suppressed for facilitating reading of the charge accumulated in the photodiode layer 16, thereby enabling the read out voltage to be lowered.
Inventors:
Mikiko Hori
Yoshiyuki Shioyama
Seigo Abe
Hideki Inokuma
Hidenori Shibata
Akira Makabe
Eiko Nomachi
Hiroshi Naruse
Ikuko Inoue
Masayuki Matsunaga
Hisanori Ihara
Nobuo Nakamura
Tetsuya Yamaguchi
Hiroshi Yamashita
Hidetoshi Nozaki
Yoshiyuki Shioyama
Seigo Abe
Hideki Inokuma
Hidenori Shibata
Akira Makabe
Eiko Nomachi
Hiroshi Naruse
Ikuko Inoue
Masayuki Matsunaga
Hisanori Ihara
Nobuo Nakamura
Tetsuya Yamaguchi
Hiroshi Yamashita
Hidetoshi Nozaki
Application Number:
JP25871498A
Publication Date:
September 08, 2003
Filing Date:
September 11, 1998
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/146; H01L27/148; H04N5/335; H04N5/341; H04N5/361; H04N5/369; H04N5/372; H04N5/374; (IPC1-7): H01L27/146; H01L27/148; H04N5/335
Domestic Patent References:
| JP2280377A | ||||
| JP10209422A | ||||
| JP6339081A |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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