PURPOSE: To let laser light be entered without any loss and be sufficiently absorbed and excite solid laser materials with good effeciency by improving the sectional shape of the solid laser materials.

CONSTITUTION: Solid laser materials 3a, 3b are deposited with antireflection films on their incident surfaces A in compliance with the oscillation wavelength of semiconductor laser elements by tilting the incident surfaces A of the output laser light from the semiconductor laser elements 1a, 1b by a specified angle, e.g., Brewster's angle. Then, the laser light from the arrays 1a, 1b enters the materials 3a, 3b without any loss and are total reflected subsequently by the other side faces B, C, D. The light again enters the incident faces A, from where it is emitted to the outside. If, for example, the materials 3a, 3b are NdP5O14 crystal, the excited light is sufficiently absorved in the crystal while repeating total recleftion because the light absorptivity of said crystal is high, thus the light to be emitted again from the indicent surfaces A may be virtually eliminated.