PURPOSE: To realize a CCD solid-state image pick-up element able to make a CCD solid-state image pick-up device and a high breakdown strength driving IC one chip without lowering a characteristic of a CD solid pick-up element.

CONSTITUTION: The mutually electrically separated first p-type insular region 2 and second p-type insular region 3 are formed on an n-type substrate 1. An n-type insular region 4 is formed in the second p-type insular region 3 by high energy ion implantation. A photodetector part 5, a vertical transfer CCD 6, a horizontal transfer CCD 7 and a charge detection part 8 are formed in the first p-type insular region 2. A drive circuit 9 driving the vertical transfer CCD 6 and the horizontal transfer CCD 7 are constituted of a MOSFET formed on the second p-type insular region 3 and the n-type insular region 4.