To provide an FT-CCD with a photoelectric conversion element for pixels to which stray light caused by sneak of light is hardly incident.
This solid-state image pickup apparatus comprises a photosensitive section arranged on a surface of a semiconductor substrate, an output transmission path formed in a region outside of the photosensitive section on one surface of the semiconductor substrate, a plurality of charge transmission channels that cross the photosensitive section along a fixed direction DV and reach the output transmission path, a plurality of transparent transfer electrodes for pixels formed on the photosensitive section that cross each of the plurality of charge transmission channels along a direction DH that intersects the direction DV in planar view and are arranged in a fixed pitch along the direction DV, which constitutes a photoelectric conversion element for pixels together with the charge transmission channels at each intersection member with the plurality of charge transmission channels in planar view, and a light shield film that has an opening only on each of the photoelectric elements for pixels.
JPH0423331 | SEMICONDUCTOR DEVICE |
JP2010278295 | IMAGE CAPTURING APPARATUS AND METHOD OF ARRANGING IMAGING ELEMENT |
KAWAJIRI KAZUHIRO
JPH0677460A | 1994-03-18 | |||
JPH0774339A | 1995-03-17 | |||
JPS62266869A | 1987-11-19 | |||
JPS61242067A | 1986-10-28 | |||
JPS59195864A | 1984-11-07 | |||
JPS5412216A | 1979-01-29 | |||
JPS58111491A | 1983-07-02 | |||
JPH1070258A | 1998-03-10 |
Mikio Kuruyama
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