To provide a solid-state image pickup device less apt to cause color mixture even if an image size is reduced, and also to provide a method for manufacturing the same.

In a rear surface irradiation type solid-state image pickup device 1, a multilayer interconnection layer 13, a semiconductor substrate 20, a plurality of color filters 32, and a plurality of microlenses 33 are provided on a supporting substrate 11 in this order. P-type regions 21 are formed so as to partition a lower layer part of the semiconductor substrate 20 into a plurality of regions to embed insulating members 23 comprising for instance BSG over the p-type regions 21. PD regions 25 are partitioned by the p-type regions 21 and the insulating members 23. High concentration regions 26 are formed in the lower parts of the PD regions 25, and the upper parts are made low concentration regions 27.