PURPOSE: To reduce dark current by a method wherein a photodetector section constituted of an amorphous Si Schottky barrier photodiode is built on a scanning circuit provided substrate.
CONSTITUTION: A p+ region 11 is provided for the formation of a diode and, at the same time, a scanning circuit forming n+ type region 12 (CCD) or p+ type region 13 (BBD) are formed on an n type semiconductor substrate 10. A gate electrode 14 is built on the substrate 10 across an insulator film 15 and an insulator 16 is laid on the electrode 14. Next, on the substrate 10, a diode electrode 17 is provided electrically connected with the p+ type region 11, and a Schottky material made layer 18 and an amorphous Si layer 19 are formed on the electrode 17, with a Schottky barrier photodiode formed by the layers 18 and 19. A transparent electrode 20 is laid on the amorphous Si layer 19 for the completion of a solid state image pickup device.
MIZOBUCHI YUUZOU
SAITOU MITSUO
