PURPOSE: To improve the S/N ratio of a solid-state image pickup device, which uses a silicon semiconductor substrate, in a poor light, by providing a silicon nitride film on the surface of the photodetection part.
CONSTITUTION: An Si substrate 21 and an impurity diffused layer 22 of the opposite conduction type constitute a photodiode, and a silicon nitride film 26 is formed on the layer 22, so light incident to the layer 22 reaches the layer 22 through a protective oxide film 27 and a silicon nitride film 26. In this case, reflectivity R showing the rate of light reflected without sriking the layer 22 to the light arriving at the protective oxide film 27 is extremely small to increase the ratio of light which is usable by actually striking the impurity diffused layer 22.
MITOMI YOSHINORI
CHIBA TOSHIYUKI
