PURPOSE: To absorb excessive light incident to a part other than a photoelectric conversion part on a light shielding metallic layer through a film which has low light transmittivity and reflectivity, to reduce multiple reflection with a sealed glass surface, and to prevent a smear phenomenon, by covering the circumference of said photoelectric conversion part with said film.
CONSTITUTION: On a semiconductor substrate 6, plural photoelectric conversion parts 1 and vertical charge transfer parts 2 having plural electrodes which transfer charges obtained through the cnversion of the conversion parts 1 in a prescribed direction are formed. Further, a horizontal charge transfer part 3 which picks up the charges transferred from the transfer parts 2 as electric signals, and an output part 4 are provided. On the transfer parts 2 near the conversion parts 1, a layer of aluminum 5 for light shielding is formed, and this layer is covered with a film 8 which has low light transmittivity and reflectivity. The film 8 absorbs excessive light incident to parts other than the conversion parts 1 to reduce multiple reflection with the surface of a sealed glass cap 7, preventing the occurrence of a smear phenomenon.
JPS52144218A | 1977-12-01 | |||
JPS52123824A | 1977-10-18 |
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