PURPOSE: To increase the gains of a signal output circuit by isolating a second base body from a second base body for forming a shift register group for scanning in order to shape an MOS type transistor and connecting a source electrode to the second base body for the MOS type transistor.
CONSTITUTION: A P type second base body formed in an N type first base body 18 is isolated into a second base body 19 for a CCD section and a second base body 26 for a signal output circuit section, and a source 25 in an MOSFET22 is connected to the second base body 26 for the signal output circuit. Since the potential of a second base body 27 also changes at the same time with the change of the potential of a source 28 in the signal output circuit, voltage between the source 28 and the second base body 27 is made constant at all times. Consequently, ideal gains can be obtained because the MOSFET22 functions as if it has no substrate effect. Accordingly, the gains of the signal output circuit section can be increased largely, and picture signals in which an SN ratio to noises from an external circuit hardly deteriorates can be acquired.
| JPS5363989 | CHARGE COUPLED DEVICE |
| JPS5371578 | CHARGE TRANSFER DEVICE |
| JPS5658282 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
AKIYAMA TOSHIYUKI
ITOU KENJI
KOIKE NORIO
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