PURPOSE: To obtain a solid-state image sensing device, in which a lens can be finely processed, by a method wherein a microlens is formed of novolak resin.

CONSTITUTION: An ultraviolet or a far ultraviolet resist layer (novolak resin) as a positive type resist layer 52 is applied onto a fixed layer 50 through a spin coating method. As novolak resin can be finely processed, photodetective parts 14 can be densely formed. After the positive type resist layer 52 is applied, the layer 52 is exposed to ultraviolet rays excluding the photodetective parts 14 and developed into a prescribed pattern. Then, a semiconductor substrate 12 is thermally treated at a temperature of 160°C or below to thermally deform the positive type resist layer 52 into hemispheres, and thus micro-lenses 28 whose peripheral parts 28a are interlinked together can be obtained. After the micro-lenses 28 are formed, the opaque positive type resist layer 52 becomes transparent by the irradiation with ultraviolet rays.