PURPOSE: To prevent deterioration of resolution due to cross talk among picture elements, by making the pattern of photoconductive layers, which are arranged at a plurality of places on a signal charge reading circuit, smaller than the pattern of upper electrodes, which are formed on the photoconductive layers.
CONSTITUTION: On an insulating substrate 101, a switching element 102, which is provided for each picture element, is formed by a gate insulating film 103, a gate electrode 104 and the like. After an interlayer insulating film 106 is formed, a contact hole is provided and a reading electrode 105 is formed. Thereafter, an interlayer insulating film 107 is formed, and the surface of a photoelectric conversion element is smoothed. An inorganic insulating material is used for the film 106, and an organic insulating material is used for the film 107. Then, a contact hole is provided. A lower electrode 108 of the photoelectric conversion element and a wire bonding pad 111 are formed. Then, an amorphous silicon layer 110 is formed, and a transparent electrode 109 is formed. Thereafter, the layer 110 is patterned with the electrode 109 as a mask.
JP3307364 | MANUFACTURE OF SOLID-STATE IMAGE SENSOR |
JPS5838940 | 【発明の名称】ホウシヤカンチソウチ |
JPS62257104 | COLOR FILTER |