To prevent nonuniforming in sensitivity and color at pixels outside an image-sensing region by arranging a light-shielded dummy pixel outside a photoelectric conversion element for detecting the reference level of at least one of three sides other than a side adjacent to the horizontal resistor of the image-sensing region.

In three sides other than a side adjacent to the horizontal resistor of an image-sensing region, dummy pixels 17, 17,... are arranged at the outermost outside, thus preventing an outermost one of photoelectric conversion elements 3, 3,... for detecting the reference level of the image sensing region from being directly adjoining a periphery circuit or the like, avoiding the malfunction of photoelectric conversion elements 2, 2,... inside the image sensing region and structure caused by allowing the photoelectric conversion elements 3, 3,... for detecting the reference level and the photoelectric conversion elements 2, 2,... that are close to the photoelectric conversion elements 3, 3,... for detecting the reference level and have an opening to be affected by the periphery circuit or the like outside the image sensing region, and hence reducing the nonuniformity in the sensitivity and color in the photoelectric conversion elements 2, 2,....