To provide a CMOS-type image sensor for reducing the influence that parasitic resistance between pixels exerts upon a blackening correction potential.

In a CMOS-type image sensor comprising a pixel 1 that includes a photo-diode 11, an FD section 16, a reset transistor 13, an amplification transistor 14 and a selection transistor 15, a pixel 1b connected to the same vertical signal line 26 as an output pixel 1a, that outputs an electric signal detected by the FD section 16a, and disposed at a position spaced apart from the output pixel 1a by a predetermined distance is defined as a correction pixel, a potential Vref is applied to an FD section 16b of the correction pixel, and a selection transistor 15b of the correction pixel 1b is brought into a conducting state.