Title:
SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS
Document Type and Number:
Japanese Patent JP2022068751
Kind Code:
A
Abstract:
To improve signal charge transfer.SOLUTION: A solid state image sensor includes: a first charge storage region and a second charge storage region provided on a semiconductor layer with a mutual distance; and a transfer transistor whose channel is formed in the semiconductor layer neighboring a gate electrode through a gate insulator, for transferring signal charge stored in the first charge storage region to the second charge storage region through the channel. A thickness of the gate insulator at the downstream side of a signal charge transmission direction is thinner than a thickness at the upstream side of the signal charge transmission direction.SELECTED DRAWING: Figure 5B
Inventors:
SASAKI KAZUYA
Application Number:
JP2020177600A
Publication Date:
May 10, 2022
Filing Date:
October 22, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L27/146; H01L21/283; H01L21/336; H01L21/8234; H01L29/41; H01L29/423; H04N5/374
Attorney, Agent or Firm:
田中 秀▲てつ▼
Ryu Kobayashi
Tetsuya Mori
Ryu Kobayashi
Tetsuya Mori