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Patent Searching and Data


Title:
SOLID STATE IMAGE SENSOR
Document Type and Number:
Japanese Patent JP2003031788
Kind Code:
A
Abstract:

To solve a problem that a coupling capacitance is generated between a photodiode 9 and three-layer aluminum 1 at the part of a light shielding pixel not covered with a surface protective layer 10 (coupling capacitance is not generated in an effective pixel where the photodiode 9 is not covered with the three-layer aluminum 1) and since charges are generated from the photodiode 9 of the light shielding pixel, which does not generate any charge essentially, and outputted to the peripheral circuit, a black level detection reference may be shifted.

The photodiode 19 region in the light shielding pixel and the effective pixel is covered partially with two-layer aluminum 12.


Inventors:
KUBOTA MUTSUMI
ENDO YASUYUKI
Application Number:
JP2001220118A
Publication Date:
January 31, 2003
Filing Date:
July 19, 2001
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
RYODEN SEMICONDUCTOR SYST ENG
International Classes:
H01L27/146; H04N5/335; H04N5/365; H04N5/369; (IPC1-7): H01L27/146; H04N5/335
Attorney, Agent or Firm:
Hiroaki Tazawa (1 person outside)