Title:
SOLID STATE IMAGE SENSOR
Document Type and Number:
Japanese Patent JP2019213174
Kind Code:
A
Abstract:
To provide a solid state image sensor suppressing readout noise of a gloval shutter type pixel.SOLUTION: A top substrate has a photodiode 1, and a readout transistor 5 connected with a floating diffusion part 4 to which signal charges are transferred from the photodiode, and a bottom substrate has time voltage conversion transistors 11, 12 for inputting the output from the readout transistor to a gate part, and signal storage parts 13, 14 for holding a signal voltage converted into a voltage. A first ramp voltage is applied to the source of the readout transistor 5, conversion time until the source voltage becomes smaller than the channel voltage and a current begins to flow and the drain voltage changes is determined, and then the conversion time is returned to the voltage signal by a second ramp voltage inputted to the sources of the time voltage conversion transistors 11, 12.SELECTED DRAWING: Figure 1
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Inventors:
MATSUNAGA YOSHIYUKI
Application Number:
JP2018110758A
Publication Date:
December 12, 2019
Filing Date:
June 09, 2018
Export Citation:
Assignee:
MOSAIC DESIGN CO LTD
International Classes:
H04N5/3745