Title:
SOLID STATE IMAGE SENSOR
Document Type and Number:
Japanese Patent JP2023002407
Kind Code:
A
Abstract:
To provide a technique for improving linearity during low illuminance.SOLUTION: A solid state image sensor includes: a pixel array having a plurality of pixels disposed in a matrix and a plurality of pixel signal lines connected to the plurality of pixels, to which pixel signals from the plurality of pixels are supplied; a column-parallel AD converter circuit connected to the plurality of pixel signal lines; and a reference voltage generation circuit for generating a reference voltage in ramp waveform whose voltage linearly changes as time elapse. The column-parallel AD converter circuit includes a first AD converter, the first AD converter includes a first input terminal connected to the pixel signal line, a second input terminal for accepting the reference voltage, and an offset generation circuit connected to the first input terminal, for generating an offset voltage at the first input terminal.SELECTED DRAWING: Figure 3
Inventors:
KATO NORIHITO
MORISHITA GEN
MORISHITA GEN
Application Number:
JP2021103653A
Publication Date:
January 10, 2023
Filing Date:
June 22, 2021
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H04N25/78; H04N25/616
Attorney, Agent or Firm:
Polar Patent Attorney Corporation
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