PURPOSE: To scale down the chip-size of a sensor, and to increase the density of the picture elements by operating a section not crossed with the optical cross-talk preventive region of a sub-electrode arranging section as an optical opening section.

CONSTITUTION: Sub-electrodes 13-11, 13-12,..., and 13-33 formed onto an insulating film by a light-transmitting conductive material among each CMD photodetector groups in columns and optical cross-talk preventive regions 12-1, 12-2,..., and 12-4 shaped in the direction that the regions 12-1, 12-2,..., and 12-4 cross with the sub-electrodes 13-11, 13-12,..., and 13-33 among respective CMD photodetector groups disposed in rows are formed, and sections not crossed with the optical cross-talk preventive regions 12-1, 12-2,..., and 12-4 of a sub-electrode arranging section are operated as optical opening sections in the same manner as the gate electrode sections 11-11, 11-12,..., and 11-33 of the CMD photodetectors. Consequently, the dimension in the longitudinal direction of a unit region can be scaled down. Accordingly, the chip-size is miniaturized, and the density of the picture elements is increased.