To solve the problem that a conventional CMOS image sensor does not have a frame shutter function and has loss since a signal output drops because of substrate effect of a transistor for amplification and a large threshold.

Electric charges are accumulated in a photodiode PD by an amount corresponding to the quantity of incident light, and transferred to a substrate right below a MOS gate Mccd through an MOS gate Mgx1 and accumulated there. The electric charges are passed through a MOS gate Mgx2 and converted to potential variation by Fd. The potential of the FD is amplified by a transistor Mamp for amplification and outputted to a signal output line 11 when a transistor Msel for pixel selection is off. The transistor Mamp is constituted having its substrate separated from other transistors Msel and Mrst and gates Mccd, Mgx1, and Mgx2 to avoid the substrate effect and has its threshold set lower than other elements.