To solve the problem, if a first-layer electrode and a second-layer electrode are formed in pile between pixels in the vertical direction, the height of this area being increased and the efficiency in gathering light incident on pixels being deteriorated.

A solid-state imaging device has pixel portion electrode structure, that is two-layered electrode structure and is based on two-phase clock vertical transfer. The two-layered electrode structure is one such that transfer electrodes 22-1 and 22-2 in two layers are arranged at a rate of one layer per pixel, and there is on layer between sensor portions 14 in the vertical direction. Two-phase vertical transfer clocks V1 and V2 are applied to the transfer electrodes 22-1 and 22-2 in two layers, and vertical transfer driving of signal charges is thereby performed.