To expand a dynamic range of a solid state imaging device without producing unnaturalness in an image.

On a semiconductor substrate 10 including a light receiving surface having photoelectric converters (photo diodes 11R, 11G, 11B) formed divided into pixels disposed in a matrix shape, an electrochromic film 16 having an optical transmittance, which varies from a first transmittance to a second transmittance according to an applied voltage, is formed on a light incident path to a photoelectric converter relative to a portion of pixels selected from the pixels. On the lower layer of the electrochromic film, a lower electrode 15 is formed, and on the upper layer of the electrochromic film, an upper electrode 17 is formed.