To provide a back-illuminated CMOS solid-state imaging device that avoids the degradation of image quality.

A solid-state imaging device 21 includes a semiconductor substrate 42 on which PDs 32 converting received light into an electric signal are planarly arranged and a shutter layer 44 controlling transmission of light incident into the semiconductor substrate 42. The distance between the semiconductor substrate 42 and the shutter layer 44 is set to be smaller than or equal to the distance between shutter elements 33 formed in the shutter layer 44. The shutter layer 44 adjusts a place that shades light, according to the incident angle of light with respect to the PDs 32.