Title:
固体撮像素子、その駆動回路および撮像装置
Document Type and Number:
Japanese Patent JP7198675
Kind Code:
B2
Abstract:
To have an advantage of high sensitivity due to a photoelectric conversion film stacking type, combined with advantages of low noise and doubling a maximum frame frequency by enabling an analog correlated double sampling circuit to be installed and make it possible to suppress an occurrence of afterimages.SOLUTION: A unit pixel 102 of a solid-state imaging device formed by laminating photoelectric conversion films (PL) 211, includes means (RSD) 219 for resetting a signal charge of a storage capacitor unit (SD) 218 in addition to a transfer transistor (TX) 212, a floating diffusion capacitance reset transistor (RSD) 219, a source follower amplifier transistor (SF) 215, and a selection transistor (SL) 216. The photoelectric conversion film (PL) 211 and the storage capacitor unit (SD) 218 are connected by a via (VIA) 227. In addition, a node of an-type silicon photodiode is replaced with an n+type silicon storage capacitor.SELECTED DRAWING: Figure 2
Inventors:
Toshiki Arai
Hiroshi Otake
Toshihisa Watanabe
Hiroshi Otake
Toshihisa Watanabe
Application Number:
JP2019007673A
Publication Date:
January 04, 2023
Filing Date:
January 21, 2019
Export Citation:
Assignee:
Japan Broadcasting Corporation
International Classes:
H04N25/626; H01L27/146; H04N25/771
Domestic Patent References:
| JP2017041909A | ||||
| JP2017135696A | ||||
| JP7288745A | ||||
| JP2016510191A | ||||
| JP2013070181A | ||||
| JP2015167343A |
Attorney, Agent or Firm:
Hiroshi Kawano
Teruhisa Tsukui
Teruhisa Tsukui
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