To provide a solid state imaging device, along with its method for manufacturing, wherein the dark current in an effective pixel region and an OB (optical black) region is reduced, with OB step reduced, as well.

The solid state imaging device includes an antireflection film 106 which contains hydrogen and is arranged above a photodiode 102, and a hydrogen diffusion preventing film 107, arranged above the reflection preventing film 106. According to this configuration, hydrogen can be supplied efficiently to the surface of a semiconductor substrate 101, from the reflection preventing film 106 which is a source for supplying hydrogen, thereby reducing the absolute quantity of dark current. By forming the antireflection film 106 which is a source for supplying hydrogen below a light-shielding film 109, a dark output offset can be suppressed between an optical black region and an effective pixel region, produced due to the difference in the hydrogen supply quantity.