To provide a solid-state imaging device capable of achieving increased pixels and reduced power consumption by reducing capacitance between transfer electrodes.

A solid-state imaging device 100 comprises: a semiconductor substrate 110; a plurality of photoelectric conversion portions 120 formed in a matrix form in the semiconductor substrate 110, for converting incident light into electrical charges; a vertical transfer region 130 formed in the semiconductor substrate 110, for transferring the electrical charges converted by the plurality of photoelectric conversion portions 120; a gate insulating film 131 formed on the vertical transfer region 130; and a plurality of vertical transfer electrodes 140 formed in a transfer direction side-by-side in a single electrode layer above the vertical transfer region 130 through the gate insulating film 131, in which a width A in the transfer direction in an upper part of an interelectrode gap, which is a space between the transfer electrodes adjacent to each other of the plurality of vertical transfer electrodes 140, is greater than a width B in the transfer direction in a lower part of the interelectrode gap.