To enable edge beads of a dielectric film to be removed and a processing apparatus to be rinsed by depositing a coating solution containing a dielectric material and a solvent on a substrate and depositing a specific aromatic aliphatic ether on the edge part of the substrate surface.
A coating solution comprising 1-50 wt.% dielectric material and 50-99 wt.% aromatic aliphatic ether represented by the formula (e.g. anisole or phenetole) is prepared and is caused to pass through a mocropore filtering apparatus. The coating solution is poured by portions onto the surface of a substrate, such as a rotating wafer being coated by spin coating. After the removal of edge beads formed, the applied coating solution is baked under heating at 70-350°C and is cured at 300-450°C to form a dielectric film. A polyarylene ether and an organohydridesiloxane resin are examples of the dielectric material. In the formula, R is CnH2n+1 (wherein (n) is 1-6); and R1 to R5 are each CmH2m+1 (wherein (m) is 0-3).
| WO/2010/047891 | COATED METALLIZED FILMS AND THEIR METHOD OF MANUFACTURE |
| JPWO2018025586 | Heat conduction sheet |
| JPH06157877 | THERMOPLASTIC POLYESTER COMPOSITION AND POLYESTER FILM |
NAKANO TADASHI
KELLY M BERIZU
CHRYSLER LAW
