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Title:
SOURCE GAS FEEDER
Document Type and Number:
Japanese Patent JP2009062615
Kind Code:
A
Abstract:

To provide a source gas feeder which can correctly control the amount of the source gas to be fed to a vapor deposition chamber upon thin film formation by a chemical vapor deposition process.

The source gas feeder 100 comprises: a source material evaporation part 110 vaporizing a source material 120 and generating a source gas; a heater 130; a carrier gas feeding part 140; a waiting chamber 150; and a plurality of valves V1 to V6, and the space between the source material evaporation part 110 and the vapor deposition chamber is provided with the waiting chamber 150 for feeding a prescribed amount of source gas to the vapor deposition chamber. The inside of the waiting chamber 150 is provided with a deposition plate 160 depositing a source gas 125.


Inventors:
JANG TAEK-YONG
BYUNG-IL LEE
RI NAGAHIRO
JANG SEOK PIL
CHO KISHO
Application Number:
JP2008220722A
Publication Date:
March 26, 2009
Filing Date:
August 29, 2008
Export Citation:
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Assignee:
TERA SEMICON CORP
International Classes:
C23C16/455; C23C16/448; H01L21/205
Domestic Patent References:
JP2003147529A2003-05-21
JP2002502465A2002-01-22
JPH01179410A1989-07-17
JP2006299335A2006-11-02
JPH06310444A1994-11-04
Foreign References:
WO2006101697A22006-09-28
WO2007032826A22007-03-22
Attorney, Agent or Firm:
Yoichi Oshima



 
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