Title:
スピントルクトランスファーメモリセル構造および方法
Document Type and Number:
Japanese Patent JP5795685
Kind Code:
B2
Abstract:
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise an annular STT stack including a nonmagnetic material between a first ferromagnetic material and a second ferromagnetic material and a soft magnetic material surrounding at least a portion of the annular STT stack.
Inventors:
Liu, Jun
Sandu, Ghat S.
Sandu, Ghat S.
Application Number:
JP2014511383A
Publication Date:
October 14, 2015
Filing Date:
May 02, 2012
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/8246; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| JP2008159613A | ||||
| JP2005340715A | ||||
| JP2011204768A | ||||
| JP2006060236A | ||||
| JP11353867A | ||||
| JP2004349671A |
Foreign References:
| WO2011005484A1 |
Attorney, Agent or Firm:
Nomura Yasuhisa
Yoshiyuki Osuga
Yoshiyuki Osuga
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