To furthermore increase the transport distance of a spin polarized carrier in a semiconductor.
A spin polarized carrier transport device includes: a channel layer 101 comprising a semiconductor; a spin polarized carrier generation part 102; a surface acoustic wave generation part 103; and a spin orbit interaction adjustment part 104. The spin polarized carrier generation part 102 generates a spin polarized carrier at a carrier generation site of the channel layer 101. The surface acoustic wave generation part 103 generates a surface acoustic wave 131 passing the carrier generation site, on the channel layer 101. The spin orbit interaction adjustment part 104 makes same the magnitudes of different two spin orbit interactions acting on a conduction band electron in the channel layer 101.
GOTO HIDEKI
SAGAWA TETSUOMI
YOSHIDA MAKOTO
NITTA JUNSAKU
UNIV TOHOKU
JPN6014024972; H. Sanada、外6名: 'Acoustically Induced Spin-Orbit Interactions Revealed by Two-Dimensional Imaging of Spin Transport i' PHYSICAL REVIEW LETTERS [online] 第106巻(216602), 20110526, p.216602-1〜216602-4
JPN6014024975; 江藤幹雄: '半導体中のスピン軌道相互作用入門(その3:最終回)' 固体物理 第43巻,第7号, 20080715, p.1-10, 株式会社 アグネ技術センター
Shigeki Yamakawa
Yuzo Koike
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