Title:
ELECTROCHEMICAL DEVICE
Document Type and Number:
Japanese Patent JP3229303
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the ionization efficiency of a donor or an acceptor and to eliminate the need for a light-shielding means by setting the total amount of oxygen, nitrogen, and carbon in source/drain regions to a specific value or less.
SOLUTION: A silicon oxide film is manufactured on a glass substrate as a blocking layer 38 using the magnetron RF sputtering method. A silicon film where the total amount of oxygen, carbon, and nitrogen is added only by 7×1019 cm-3 or preferably 1×1019 cm-3 or less is formed on it by the LPCVA method, the sputtering method, or the plasma method. As a result, a region that becomes a source or a drain that is a pair of impurity regions has extremely small amount of impurities such as oxygen, so that crystallization further advances, thus eliminating the need for shielding light and at the same time increasing speed since the sheet resistance of the source/drain regions can be reduced.
Inventors:
Shunpei Yamazaki
Application Number:
JP2000074445A
Publication Date:
November 19, 2001
Filing Date:
November 20, 1990
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1368; G02F1/136; G09F9/30; H01L29/786; (IPC1-7): H01L29/786; G02F1/1368
Domestic Patent References:
| JP62147759A | ||||
| JP4186635A | ||||
| JP3246973A |