Title:
スパッタターゲット
Document Type and Number:
Japanese Patent JP5065565
Kind Code:
B2
Abstract:
A sputter target is made of a Ti-Al alloy containing Al in the range of 1 to 30 atm %. In the Ti-Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti-Al alloy is 500 mum or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti-Al-N film as a barrier film is formed by using the sputter target made of the Ti-Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.
Inventors:
Yukinobu Suzuki
Takashi Ishigami
Yasuo Takasaka
Naomi Fujioka
Takashi Watanabe
Koichi Watanabe
Kenya Sano
Takashi Ishigami
Yasuo Takasaka
Naomi Fujioka
Takashi Watanabe
Koichi Watanabe
Kenya Sano
Application Number:
JP2001578717A
Publication Date:
November 07, 2012
Filing Date:
April 20, 2001
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C23C14/34; C23C14/06; H01L21/02; H01L21/285; H01L21/768; H01L21/822; H01L21/8242; H01L27/04; H01L27/108
Domestic Patent References:
| JPH06299342A | 1994-10-25 | |||
| JPH06280009A | 1994-10-04 | |||
| JPH08134635A | 1996-05-28 | |||
| JPH06322530A | 1994-11-22 | |||
| JP2000100755A | 2000-04-07 | |||
| JPH11354505A | 1999-12-24 |
Attorney, Agent or Firm:
Patent Business Corporation Sakura International Patent Office
Saichi Suyama
Saichi Suyama