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Title:
SPUTTERING APPARATUS
Document Type and Number:
Japanese Patent JPH05230640
Kind Code:
A
Abstract:

PURPOSE: To provide a sputtering apparatus by which the specific resistance of a film formed on the surface of a substrate to be treated and the film thickness can be uniformized as for the improvement of the feeding part of a reaction gas in a sputtering apparatus.

CONSTITUTION: In a sputtering apparatus in which a film is formed by attaching grains for film forming coming by flying from a target 3 to the surface of a substrate 12 to be treated placed on a wafer stage 2 in a vacuum chamber 1, it is constituted in such a manner that a gas blowing port 3a is provided with the target 3.


Inventors:
IWAMA RYUJI
Application Number:
JP3766692A
Publication Date:
September 07, 1993
Filing Date:
February 25, 1992
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
H01L21/203; C23C14/34; H01L21/285; (IPC1-7): C23C14/34; H01L21/203; H01L21/285
Attorney, Agent or Firm:
Teiichi



 
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