PURPOSE: To prevent sputtering to a position other than that to be machined and enable a sputtering film to be formed while monitoring the film thickness by driving a supply reel and a take-up reel and positioning the non-hole part and the hole part of a film onto the semiconductor substrate alternately.

CONSTITUTION: A band-shaped member, namely a film 4 is placed on a wafer 1 and this film 4 can be fed from left to right in reference to the paper surface by a supply reel 3 and a take-up reel 8. A hole 13 which is in the same size as the region for forming a thin film on the wafer in specified gaps is provided on the film 4. Thus, it becomes possible to switch between formation of a sputtering film for measuring on the film 4 and that of sputtering film on the wafer 1 through the hole 13 of the film by shifting the band-shaped film 4 at any time. It abbreviates vacuum discharge time, replacement gas introduction time, etc., thus finding highly accurate sputtering conditions.