Title:
SPUTTERING SYSTEM FOR PRODUCING THIN FILM
Document Type and Number:
Japanese Patent JP3936970
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a sputtering system for producing a thin film with a miniaturized structure by which the stain of adjoining targets is prevented, and the production of a thin film can be performed at an advantageous cost while utilizing the strong point of the conventional facing target sputtering method by which high speed-low temperature sputtering is possible.
SOLUTION: A pair of multi-prism type target holders 11 in which a target 13 is arranged at each face parallel to the rotary axis of a rotatable multi-prismatic body are arranged to face each other. Further, the space between the respectively adjoining targets 13 of the multi-prism type target holder 11 is provided with an attachable and detachable protective board 14 for preventing the stain of the surfaces of the targets 13 in the production of a thin film.
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Inventors:
Morohashi Shinichi
Application Number:
JP2002207263A
Publication Date:
June 27, 2007
Filing Date:
July 16, 2002
Export Citation:
Assignee:
Yamaguchi University
International Classes:
C23C14/00; C23C14/34; H01L21/285; (IPC1-7): C23C14/00; H01L21/285
Domestic Patent References:
| JP2003301267A | ||||
| JP4157150A | ||||
| JP6017248A | ||||
| JP2000178731A | ||||
| JP2001073137A | ||||
| JP2003183827A |
Other References:
MOROHASHI S. et.al.,SiO2 insulation layer fabricated using RF magnetron facing target sputtering and conventional RF magnetron sputtering,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1,日本,2001年 8月,Vol.40, No.8,p.4876-4877