To deposit a film improved in characteristics at a high speed and low cast.
In a sputter electrode part 22 having a target 30 on the inside, an opening 21 is formed only on one side, and the substrate 90 to be treated is held to a position not crossed with the projecting face in the direction 31 of the normal of the target 30 by a holding mechanism 80. Inert gas is introduced from an inert gas feeder 150 into the inside of the sputter electrode part 22. Reactive gas is fed from a first reactive gas feeder 130 and a second reactive gas feeder 140 to the outside of the sputter electrode part 22 which is also the space between the substrate 90 to be treated and the target 30. The magnetic field by permanent magnets 60 trap plasma in the sputter part. A control system 160 controls the flow rate of each gas and the voltage of the target 30. Sputter power feeders 190 and 191 apply d.c. voltage on the space between an anode electrode 70 and the target 30 and can superimpose rectangular reverse voltage of high frequencies, 1 to 500 kHz.
OTANI MINORU
ANDO KENJI
NOBUMIYA TOSHIAKI
HIROO RYUJI
KANAZAWA HIDEHIRO
