To provide a sputtering system where the probability of the intrusion of outgases into a sputtered film is reduced, and the improvement of its film quality is made possible.
The sputtering system 100 where a target 40 and a wafer W are arranged at the inside of a chamber 10, and sputtering particles flied out of the target 40 are stuck to the wafer W, so as to form a sputtered film is equipped with: an internal fixture 60 within the chamber provided around a space S including the stroke of the sputtering particles from the target 40 to the wafer W and preventing the scattering of the sputtering particles from the space S to the inner wall of the chamber 10; an inflow port 65 for introducing gaseous argon into the space S partitioned by the internal fixture 60; and an exhaust port 62 provided at the bottom part of the internal fixture 60. Outgases such as H2O on H2 are carried on the flow of the gaseous argon, so as to be efficiently exhausted from the exhaust port 62, and the stagnation of the outgases at the space S can be prevented, thus the intrusion of the outgases into the sputtered film can be reduced.
Yoshiaki Naito
Cui Shu Tetsu
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