Title:
SPUTTERING SYSTEM
Document Type and Number:
Japanese Patent JP3901365
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a sputtering system by which damage given to a film in the process of film formation is reduced, a thin film uniform in film characteristics and film thickness can be formed at a high speed, and the material of a target can effectively be utilized.
SOLUTION: The side of the outer circumferential face of a cylindrical target 21 is provided with inclined cylindrical magnets 22 as annular magnets inclined to the axial center, and, on the side of the inner circumferential face of the target 21, the magnetic fields 24 in the axial direction are generated so as to be distributed into an inclined annular shape. By rotating the magnet 22, the magnetic field 24 is rotated in the circumferential direction, and the average value of the density of plasma formed on the inner circumferential face of the target 21 is made uniform over the whole face of the inner circumferential face. In this way, high speed sputtering uniformly progresses at the inner circumferential face of the target 21, by which the service life of the target 21 is prolonged, and the uniformity of the film characteristics and the distribution of the film thickness can be secured as well.
Inventors:
Tatsuya Sato
Tomoaki Sugawara
Masaharu Tanaka
Tomoaki Sugawara
Masaharu Tanaka
Application Number:
JP29763798A
Publication Date:
April 04, 2007
Filing Date:
October 05, 1998
Export Citation:
Assignee:
株式会社リコー
International Classes:
C23C14/35; C23C14/50; (IPC1-7): C23C14/35; C23C14/50
Domestic Patent References:
| JP59116375A | ||||
| JP7072345B2 | ||||
| JP5295540A |
Attorney, Agent or Firm:
Akinaka Takano