Title:
SPUTTERING TARGET FOR FORMING ELECTRICALLY CONDUCTIVE TRANSPARENT ITO FILM
Document Type and Number:
Japanese Patent JPH03199373
Kind Code:
A
Abstract:
PURPOSE: To provide a sputtering target for forming a thin film having improved electrical conductivity by sintering a molded body of powder having a compsn. prepd. by adding a specified amt. of I and Br compds. as well as a specified amt. of SnO2 to In2O3 as a principal component.
CONSTITUTION: A molded body of powder having a plate shape or other shape and a compsn. consisting of 5-30wt.% SnO2, 0.1-3wt.% one or more among InI3, InBr3, SnI2 and SnBr2 and the balance In2O3 with inevitable impurities is produced and sintered to obtain a sputtering target. Since the target contains the I and Br compds., in electrically conductive transparent film having improved electrical characteristics such as low resistivity can be obtd.
Inventors:
HOJO MAMORU
NAKAJIMA KOICHI
HORIUCHI SUSUMU
NAKAJIMA KOICHI
HORIUCHI SUSUMU
Application Number:
JP33808289A
Publication Date:
August 30, 1991
Filing Date:
December 28, 1989
Export Citation:
Assignee:
NIPPON MINING CO
International Classes:
C04B35/00; C23C14/34; (IPC1-7): C04B35/00; C23C14/34
Attorney, Agent or Firm:
Hiroshi Namikawa
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